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@@ -203,6 +203,11 @@ nandc_set_reg(nandc, NAND_READ_LOCATION_##reg, \
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#define NAND_BAM_NWD BIT(1)
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/* Finish writing in the current BAM sgl and start writing in another BAM sgl */
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#define NAND_BAM_NEXT_SGL BIT(2)
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+/*
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+ * Erased codeword status is being used two times in single transfer so this
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+ * flag will determine the current value of erased codeword status register
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+ */
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+#define NAND_ERASED_CW_SET BIT(4)
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/*
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* This data type corresponds to the BAM transaction which will be used for all
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@@ -281,6 +286,8 @@ struct nandc_regs {
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__le32 read_location2;
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__le32 read_location3;
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+ __le32 erased_cw_detect_cfg_clr;
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+ __le32 erased_cw_detect_cfg_set;
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};
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/*
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@@ -810,6 +817,13 @@ static int write_reg_dma(struct qcom_nand_controller *nandc, int first,
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if (first == NAND_FLASH_CMD)
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flow_control = true;
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+ if (first == NAND_ERASED_CW_DETECT_CFG) {
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+ if (flags & NAND_ERASED_CW_SET)
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+ vaddr = ®s->erased_cw_detect_cfg_set;
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+ else
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+ vaddr = ®s->erased_cw_detect_cfg_clr;
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+ }
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+
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if (first == NAND_EXEC_CMD)
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flags |= NAND_BAM_NWD;
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@@ -864,6 +878,9 @@ static void config_nand_page_read(struct qcom_nand_controller *nandc)
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write_reg_dma(nandc, NAND_ADDR0, 2, 0);
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write_reg_dma(nandc, NAND_DEV0_CFG0, 3, 0);
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write_reg_dma(nandc, NAND_EBI2_ECC_BUF_CFG, 1, 0);
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+ write_reg_dma(nandc, NAND_ERASED_CW_DETECT_CFG, 1, 0);
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+ write_reg_dma(nandc, NAND_ERASED_CW_DETECT_CFG, 1,
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+ NAND_ERASED_CW_SET | NAND_BAM_NEXT_SGL);
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}
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/*
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@@ -2264,6 +2281,10 @@ static int qcom_nand_host_setup(struct qcom_nand_host *host)
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host->clrflashstatus = FS_READY_BSY_N;
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host->clrreadstatus = 0xc0;
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+ nandc->regs->erased_cw_detect_cfg_clr =
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+ cpu_to_le32(CLR_ERASED_PAGE_DET);
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+ nandc->regs->erased_cw_detect_cfg_set =
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+ cpu_to_le32(SET_ERASED_PAGE_DET);
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dev_dbg(nandc->dev,
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"cfg0 %x cfg1 %x ecc_buf_cfg %x ecc_bch cfg %x cw_size %d cw_data %d strength %d parity_bytes %d steps %d\n",
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