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@@ -3262,6 +3262,42 @@ static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
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return nand_block_markbad_lowlevel(mtd, ofs);
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return nand_block_markbad_lowlevel(mtd, ofs);
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}
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}
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+/**
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+ * nand_max_bad_blocks - [MTD Interface] Max number of bad blocks for an mtd
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+ * @mtd: MTD device structure
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+ * @ofs: offset relative to mtd start
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+ * @len: length of mtd
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+ */
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+static int nand_max_bad_blocks(struct mtd_info *mtd, loff_t ofs, size_t len)
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+{
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+ struct nand_chip *chip = mtd_to_nand(mtd);
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+ u32 part_start_block;
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+ u32 part_end_block;
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+ u32 part_start_die;
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+ u32 part_end_die;
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+
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+ /*
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+ * max_bb_per_die and blocks_per_die used to determine
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+ * the maximum bad block count.
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+ */
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+ if (!chip->max_bb_per_die || !chip->blocks_per_die)
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+ return -ENOTSUPP;
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+
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+ /* Get the start and end of the partition in erase blocks. */
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+ part_start_block = mtd_div_by_eb(ofs, mtd);
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+ part_end_block = mtd_div_by_eb(len, mtd) + part_start_block - 1;
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+
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+ /* Get the start and end LUNs of the partition. */
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+ part_start_die = part_start_block / chip->blocks_per_die;
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+ part_end_die = part_end_block / chip->blocks_per_die;
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+
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+ /*
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+ * Look up the bad blocks per unit and multiply by the number of units
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+ * that the partition spans.
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+ */
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+ return chip->max_bb_per_die * (part_end_die - part_start_die + 1);
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+}
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+
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/**
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/**
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* nand_onfi_set_features- [REPLACEABLE] set features for ONFI nand
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* nand_onfi_set_features- [REPLACEABLE] set features for ONFI nand
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* @mtd: MTD device structure
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* @mtd: MTD device structure
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@@ -4815,6 +4851,7 @@ int nand_scan_tail(struct mtd_info *mtd)
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mtd->_block_isreserved = nand_block_isreserved;
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mtd->_block_isreserved = nand_block_isreserved;
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mtd->_block_isbad = nand_block_isbad;
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mtd->_block_isbad = nand_block_isbad;
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mtd->_block_markbad = nand_block_markbad;
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mtd->_block_markbad = nand_block_markbad;
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+ mtd->_max_bad_blocks = nand_max_bad_blocks;
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mtd->writebufsize = mtd->writesize;
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mtd->writebufsize = mtd->writesize;
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/*
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/*
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